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 UNISONIC TECHNOLOGIES CO., LTD 2SC4617
GENERAL PURPOSE TRANSISTOR
FEATURES
* Low Cob Cob=2.0pF (typ) * Complements the UTC 2SA1774
NPN SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 2SC4617L-X-AE3-R 2SC4617G-x-AE3-R 2SC4617L-x-AL3-R 2SC4617G-x-AL3-R 2SC4617L-x-AN3-R 2SC4617G-x-AN3-R Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel
MARKING
C5X
L: Lead Free G: Halogen Free
www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
NPN SILICON TRANSISTOR
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 7 V Collector Current IC 0.15 A SOT-523 PC 150 mW Collector Power Dissipation SOT-23/SOT-323 PC 200 mW Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25C, unless otherwise specified)
PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) fT Cob TEST CONDITIONS IC= 50A IC= 1mA IE=50A VCB=60V VEB= 7V VCE=6V, IC=1mA IC=50mA, IB=5mA VCE=12V, IE= -2mA, f=100MHz VCE= 12V, IE= 0A, f=1MHz MIN 60 50 7 TYP MAX UNIT V V V A A V MHz pF
120 180 2
0.1 0.1 560 0.4 3.5
CLASSIFICATION OF hFE
RANK RANGE Q 120 ~ 270 R 180 ~ 390 S 270 ~ 560
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Grounded Emitter Propagation Characteristics 50 Collector Current, IC(mA) 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Base to Emitter Voltage, VBE (V) Ta=100 25 -55 VCE = 6V Collector Current, IC (mA)
NPN SILICON TRANSISTOR
Grounded Emitter Output Characteristics (I) 100 Ta = 25 80 60 40 20 0 0 0.4 0.8 1.2 0.50mA 0.45mA
0.40mA
0.35mA 0.30mA 0.25mA 0.20mA 0.15mA 0.10mA
0.05mA IB = 0A 1.6 2.0
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Saturation Voltage, VCE(SAT) (V)
DC Current Gain, hFE
DC Current Gain, hFE
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector saturation voltage, VCE(sat) (V)
Gain Bandwidth Product vs. Emitter Current Transition Frequency, fT (MHz) Ta = 25 500 VCE =6V
Collector Saturation Voltage, VCE(SAT) (V)
Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance, Cob (pF) Emitter Input Capacitance, Cib (pF)
20 10 5 Cib
Ta=25 f=1MHz IE=0A IC=0A
200
100
2 1 0.2 0.5 1 2 5 10
Cob
50 -0.5 -1
-2
-5
-10 -20
-50
-100
20
50
Collector Current, IE (mA)
Collector to Base Voltage, VCB (V) Emitter to Base Voltage, VEB (V)
Base Collector Time Constant (ps)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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